N-Type Electrons Collector Movement of electrons plays an important role in the current flowing from drain to source terminal. The output current is highly dependent on the voltage applied to the gate terminal. Working The gate, source and drain in this MOSFET are analogous to the base, collector, and emitter in the BJT Bipolar Junction Transistors The source and drain are made up of n-type material while component body and the substrate is made up of p-type material. An insulating layer is inserted in the device that makes gate terminals separated from the entire body. The region between drain and source is called N-channel that is controlled by the voltage present at the gate terminal.

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When I connected the gate pin of the transistor directly to the 12V power source the circuit worked as intended and the valve opened.

The LED is to easily see if the valve is open or closed. My basic idea is that if the soil gets to dry the arduino sets the gate voltage, which turns the transistor on and the valve opens. Running your Arduino at 5 V this should work ok out to a couple of Amps. I use a IRF transistor, which might be a bit of an overkill, daya it was the smallest I had.

You cannot drive the IRF in the manner shown. If the circuit is connect as in the picture only 0. Datasheet pdf. Equivalent Thanks a lot, now the circuit works exactly as I wanted! I learned from another thread here that this makes sense, because a higher gate voltage will let more current flow through the transistor. Sign up or log in Sign up using Google. Home Questions Tags Users Unanswered. By dwta our site, you acknowledge that you have read and understand our Cookie PolicyPrivacy Policyand our Terms of Service.

However I build the exact same project some months ago and used the exact same parts — the same resistances, the same transistor irf and the same valve and it worked perfectly with a 5V gate voltage. Email Required, but never shown. Sign up using Email and Password. The 5 volts seem to be to low to let enough current flow for the valve, which drains around 2. Looking at the details in datx datasheet you need to understand that the V GS is applied between the Gate and source of the N-Channel FET, you can look at Figure 1 to see the switching characteristics.

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